Micron 下一代 G11 内存芯片容量约为 G9 两倍，量产拟于 2027 年下半年开始
Micron 下一代内存芯片 G11 在同等硅片面积上可容纳约为当前 G9 两倍的数据，传输速度最高提升 1.5x，每比特传输能耗降低超过 25%。G11 跳过 G10 命名，将存储单元堆叠层数从 G9 的 276 层提高到 400 层以上，并采用更紧密的单元布局。
Micron’s next memory chip generation, G11, will fit roughly twice as much data on the same patch of silicon as today’s G9, the main route to bigger SSDs, which AI data centers now buy in huge amounts.
G9 stacks its storage cells 276 floors high. Micron skipped the G10 name and reworked its next chip for AI, calling it G11: it stacks over 400 floors and packs each cell tighter, so the same size chip holds about twice the data, moves it up to 1.5x faster and uses over 25% less energy to move each bit.
Volume production starts in the second half of 2027, so drives using G11 arrive later, and Micron hasn’t said how much cheaper each gigabyte will get, since taller stacks and a second bonded wafer also add cost.
来源：rohanpaul_ai · x.com